Short Interest in Roundhill Memory ETF (BATS:DRAM) Decreases By 56.5%

Roundhill Memory ETF (BATS:DRAM) was the target of a significant decrease in short interest in the month of August. As of August 14th, there was short interest totaling 9,715,176 shares, a decrease of 56.5% from the July 30th total of 22,317,695 shares. Based on an average daily volume of 52,842,830 shares, the days-to-cover ratio is presently 0.2 days.

Roundhill Memory ETF Stock Down 1.8%

DRAM stock opened at $55.83 on Friday. The firm’s 50 day simple moving average is $58.46. Roundhill Memory ETF has a 52-week low of $26.14 and a 52-week high of $81.34.

Institutional Inflows and Outflows

Institutional investors and hedge funds have recently added to or reduced their stakes in the stock. Comprehensive Financial Planning Inc. PA purchased a new position in Roundhill Memory ETF during the second quarter valued at $27,000. Strengthening Families & Communities LLC purchased a new stake in shares of Roundhill Memory ETF in the second quarter worth $70,000. Ameritas Advisory Services LLC purchased a new stake in shares of Roundhill Memory ETF in the second quarter worth $171,000. TD Waterhouse Canada Inc. bought a new position in shares of Roundhill Memory ETF during the second quarter valued at $209,000. Finally, OceanIQ Capital LLC bought a new position in shares of Roundhill Memory ETF during the second quarter valued at $433,000.

Roundhill Memory ETF (BATS: DRAM) is an exchange-traded fund offered by Roundhill Investments that provides targeted exposure to the memory semiconductor industry. Listed on the Cboe BZX Exchange under the ticker DRAM, the fund is intended to give investors access to companies whose primary business activities are connected to memory chips and related technologies.

The fund focuses on firms operating across the memory semiconductor supply chain, including companies involved in design and development of DRAM and NAND memory, wafer fabrication, packaging and testing, and the manufacture of semiconductor capital equipment and materials.